20.3%效率的后钝化硅太阳能电池，采用商业P-Cz晶圆

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI:10.1109/PVSC.2012.6317806

Zhenjiao Wang, P. Han, Qinglei Meng, H. Qian, Jiaqi Wu, Yongfei Jiang, N. Tang, Hongyan Lu, Haidong Zhu, Rulong Chen, P. Yang, J. Ji, Zhengrong Shi, A. Sugianto, S. Wenhem

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摘要

本文综述了新一代冥王星探测技术的研究进展。在下一代Pluto中，我们将重点放在后表面设计上，通过改进后内反射和钝化，使电池效率达到20.3%，Jsc非常高。为了获得更高的FF和Eff，还需要进一步改进电池的设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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20.3% efficiency rear passivated silicon solar cells with local back contact using commercial P-Cz wafers

In this paper, progress results on the next generation Pluto technology were reported. In the next generation Pluto, we focused on the rear surface design, by improvement of the back internal reflection and passivation we got 20.3% cell efficiency with very high Jsc. Still there is further improvement of the cell design to get high FF and Eff.

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2012 38th IEEE Photovoltaic Specialists Conference

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