R. Hajji, Luís Ledezma, G. Burgin, Jeff Gengler, T. Landon
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引用次数: 8
摘要
本文介绍了一种适用于Band-1和Band-3 LTE基站应用的宽带Doherty功率放大器(DPA)，采用Qorvo的0.25um GaN on SiC高压技术。当使用10dB PAR WCDMA信号进行测试时，该DPA在Doherty 50-Ω输出处输出85W Pavg和500W峰值功率，在20%的频率带宽上具有相对平坦的4549%平均效率。DPA为1×20MHz和3z20MHz LTE信号提供了非常好的频带1线性化DPD性能。据作者所知，这是第一个展示如此宽带高功率水平的双向DPA演示，带宽超过20%，同时保持良好的效率和相对较好的线性化性能，且复杂性较低。
85W Pavg, 500W peak power, 1.8–2.2GHz wideband GaN Doherty power amplifier
This paper presents a wideband Doherty Power Amplifier (DPA) suitable for Band-1 and Band-3 LTE Basestation applications, using Qorvo's 0.25um GaN on SiC High-Voltage technology. This DPA puts out 85W Pavg and 500W peak power at the Doherty 50-Ω output, with relatively flat 4549% average efficiency across 20% frequency bandwidth, when tested using 10dB PAR WCDMA signal. The DPA offers very good linearized DPD performance in band-1 for 1×20MHz and 3z20MHz LTE signals. To the knowledge of the authors, this is a first 2-Way DPA demonstration exhibiting such wideband high power levels, over 20% bandwidth, while maintaining good efficiency and relatively good linearized performance, with less complexity.
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