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引用次数: 0

摘要

在高掺杂条件下,我们假设了一个基于自由载流子俄歇寿命和恒定扩散系数DA的新寿命模型,准确地解决了少数载流子输运问题。本文导出了饱和电流密度的精确表达式,该表达式与已报道的金属涂层n+和p+发射体的测量数据在da值与高掺杂时的扩散率数据一致。生命周期模型与生命周期数据一致。
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Auger Transport of Noninteracting Carriers
We solve minority-carrier transport exactly by assuming a new lifetime model based on free-carrier Auger lifetime and constant diffusivity,DA, at high dopings. A new exact expression for saturation current density is derived, which fits measured data in reported sets of metal-coatedn+ and p+ emitters at DA-value consistent with diffusivity data at high dopings. The lifetime model is shown to be consistent with lifetime data.
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