在石英底座上用光谱学和组合光散射测定激活能量

Fan Zhang, M. Vergnat, В. А. Володин
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摘要

在石英表面的GeOx薄膜上,由于热处理过程中发生了GeOx→(1-)Ge+ GeO2的歧化反应,形成了非晶态锗纳米团簇。为了确定反应活化能,在400 ~ 500℃的温度下进行了退火。利用拉曼光谱研究了非晶锗纳米团簇的形貌和生长。研究发现,非晶锗喇曼散射峰的位置随退火时间的变化而变化,这是由于纳米团簇尺寸的变化造成的,即声子局域化模型不仅适用于纳米锗晶体,也适用于超小尺寸的非晶锗团簇。此外,还发现非晶锗纳米团簇形成的饱和时间与退火温度呈指数关系。在Johnson-Mehl-Avrami-Kolmogorov模型的框架内进行了纳米团簇形成的动力学分析。首次得到歧化反应的活化能为1.0±0.1 eV。
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Определение энергии активации реакции диспропорционирования аморфной пленки GeO-=SUB=-x-=/SUB=- на кварцевой подложке с использованием спектроскопии комбинационного рассеяния света
Amorphous germanium nanoclusters were formed in the GeOx film on quartz as a result of the disproportionation reaction GeOx→(1- )Ge+ GeO2 during furnace annealing. To determine the reaction activation energy, annealing was carried out at temperatures from 400 to 500 oC. The appearance and growth of amorphous germanium nanoclusters were investigated using Raman spectroscopy. It was found that the position of the Raman scattering peak from amorphous germanium varied with the annealing time, which due to the change in the sizes of nanoclusters, i.e., the phonon localization model can be applied not only to germanium nanocrystals, but also to amorphous germanium clusters, in the case of their ultra-small sizes. In addition, it was found that the saturation time for the formation of amorphous germanium nanoclusters depends exponentially on the annealing temperature. The kinetics analysis of the nanocluster’s formation was carried out within the framework of the Johnson–Mehl–Avrami–Kolmogorov model. The activation energy of the disproportionation reaction was obtained for the first time, which amounted to 1.0±0.1 eV.
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