采用45纳米SOI CMOS的可调谐反射模式n路滤波器

Jeffrey Bonner-Stewart, Charley Wilson, B. Floyd
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引用次数: 2

摘要

提出了一种可调谐的45 nm SOI CMOS反射模式n路滤波器。该滤波器采用反射式结构,将两个8相无源混频器与外部90度混合耦合器相结合,实现带内信号传递和带外信号吸收的电路。该滤波器在整个调谐范围内的插入损耗为0.8至2.1 dB,噪声系数为0.9至3.9 dB,同时从0.9 v电源消耗4至8 mW。输入参考的1 db压缩点为+0 dBm,输入参考的三阶截距点(HP3)带内+10 dBm,带外+22 dBm。
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A tunable reflection-mode N-path filter using 45-nm SOI CMOS
A tunable 700-to 3000-MHz reflection-mode N-path filter in 45-nm SOI CMOS is presented. The filter employs a reflective architecture in which two eight-phase passive mixers are combined with an external 90-degree hybrid coupler to realize a circuit that passes in-band signals and absorbs out-of-band signals. The filter achieves insertion loss 0.8 to 2.1 dB and noise figure of 0.9 to 3.9 dB over the entire tuning range, while consuming 4 to 8 mW from a 0.9-V supply. Input-referred 1-dB compression point is +0 dBm, and input-referred third-order intercept point (HP3) is +10 dBm in-band and +22 dBm out-of-band.
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