Cd3As2单晶拉曼散射的几个方面

J. Weszka, M. Renucci, A. Zwick
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引用次数: 15

摘要

在300和77 K的温度下,对Cd3As2四边形单晶进行了拉曼散射测量。得到的光谱用声子-电子和电子-电子相互作用来解释。低频区间的特征是由于声子和单粒子散射的贡献。涉及带内和带间激励的电子RS在高于80 cm−1的频率上占主导地位。在300 cm−1处,入射光频率在∑1 -∑4附近,导致了共振增强。La扩散拉曼光谱研究了Cd3As2的单晶晶体,并在300 ~ 77 K下进行了研究。腿谱可解释声子-电子和电子-电子的相互作用。在一个区域内的谱、频率、特性、扩散、声子和单个粒子。独立扩散拉曼干涉,激发电子,内带间的主要频率在80cm−1以内。在300 cm−1的一个波段上,一个共振共振共振的能量为入射能量,而激发∑1 -∑4的能量为入射能量。
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Some Aspects of Raman Scattering in Cd3As2 Single Crystals
Raman scattering measurements in the tetragonal Cd3As2 single crystals are carried out at temperatures of 300 and 77 K. The spectra obtained are interpreted in terms of phonon-electron and electron-electron interactions. The features in the low-frequency interval are due to contributions from phonon and single particle scattering. The electronic RS involving intra- and interband excitations is dominant at frequencies higher than 80 cm−1. The resonant enhancement of the band at 300 cm−1 arises from the incident light frequency being in the vicinity of ∑1 – ∑4. La diffusion Raman dans les mono-cristaux de Cd3As2 quadratique a ete etudiee a 300 et 77 K. Leg spectres Raman obtenus sont interpretes en termes des interactions un phonon–electron et electron–electron. Des spectres en region de basses frequences sont attribues a la diffusion a un phonon et a une particule. Cependant la diffusion Raman faisant intervenir des excitations electroniques intra- et interbandes est dominant aux frequences au-dessus de 80 cm−1. Une croissance resonante d'une bande a 300 cm−1 resulte du voisinage des energies de raie incidente et un seuil d'excitation ∑1 – ∑4.
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