Alexandr Tovstolytkin, T. Polek, A. Matviyenko, M. Zakharenko, M. Semen'ko, A. Pashchenko
{"title":"SrTiO3和LaAlO3衬底上La0.6Sr0.2Mn1.2O3薄膜的磁输运特性","authors":"Alexandr Tovstolytkin, T. Polek, A. Matviyenko, M. Zakharenko, M. Semen'ko, A. Pashchenko","doi":"10.1109/OMEE.2012.6464771","DOIUrl":null,"url":null,"abstract":"Electric and magnetoresistive properties of La<inf>0.6S</inf>r<inf>0.2</inf>Mn<inf>1.2</inf>O<inf>3</inf> films deposited on SrTiO<inf>3</inf> (001) and LaAlO<inf>3</inf> (001) single crystalline substrates by magnetron sputtering have been studied. Characteristic features of the evolution of resistivity, magnetoresistance and Curie temperature upon the decrease of film thickness from 500 to 12.5 nm are specified. A key role of a thin strained layer adjacent to the substrate is demonstrated. The critical thicknesses of the strained layer are calculated for the films deposited on different substrates.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"31 1","pages":"270-271"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thickness-dependent magnetotransport properties of La0.6Sr0.2Mn1.2O3 films on SrTiO3 and LaAlO3 substrates\",\"authors\":\"Alexandr Tovstolytkin, T. Polek, A. Matviyenko, M. Zakharenko, M. Semen'ko, A. Pashchenko\",\"doi\":\"10.1109/OMEE.2012.6464771\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electric and magnetoresistive properties of La<inf>0.6S</inf>r<inf>0.2</inf>Mn<inf>1.2</inf>O<inf>3</inf> films deposited on SrTiO<inf>3</inf> (001) and LaAlO<inf>3</inf> (001) single crystalline substrates by magnetron sputtering have been studied. Characteristic features of the evolution of resistivity, magnetoresistance and Curie temperature upon the decrease of film thickness from 500 to 12.5 nm are specified. A key role of a thin strained layer adjacent to the substrate is demonstrated. The critical thicknesses of the strained layer are calculated for the films deposited on different substrates.\",\"PeriodicalId\":6332,\"journal\":{\"name\":\"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)\",\"volume\":\"31 1\",\"pages\":\"270-271\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEE.2012.6464771\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEE.2012.6464771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thickness-dependent magnetotransport properties of La0.6Sr0.2Mn1.2O3 films on SrTiO3 and LaAlO3 substrates
Electric and magnetoresistive properties of La0.6Sr0.2Mn1.2O3 films deposited on SrTiO3 (001) and LaAlO3 (001) single crystalline substrates by magnetron sputtering have been studied. Characteristic features of the evolution of resistivity, magnetoresistance and Curie temperature upon the decrease of film thickness from 500 to 12.5 nm are specified. A key role of a thin strained layer adjacent to the substrate is demonstrated. The critical thicknesses of the strained layer are calculated for the films deposited on different substrates.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
