高增益砷化镓光导开关的“s形”负差分电导率

2009 Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics Pub Date : 2009-10-30 DOI:10.1109/CLEOPR.2009.5292628

Hong Liu, C. Ruan

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引用次数: 1

摘要

定性分析了高增益砷化镓光导半导体开关(PCSS)“s”形负差分电导率(NDC)的形成。NDC发展的特点是由n形NDC向s形NDC局部直接转化。

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“S-shaped” negative differential conductivity of high gain GaAs photoconductive switches

The formation of the “S-shaped” negative differential conductivity (NDC) of high gain GaAs photoconductive semiconductor switches (PCSS) is qualitatively analyzed. The development of NDC is characterized by localized direct transform from N-shaped to S-shaped NDC.

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2009 Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics

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