{"title":"高精度过电流检测高侧开关","authors":"Ana-Maria Luca, I.-A. Tranca, A. Danchiv","doi":"10.1109/SMICND.2008.4703433","DOIUrl":null,"url":null,"abstract":"This paper presents a precision over current protective function integrated in a high side power switch. The accuracy improvement is based on using a low offset, autozero amplifier for providing the same bias conditions for both the power and the sense transistors.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High precision over current detection for a high side switch\",\"authors\":\"Ana-Maria Luca, I.-A. Tranca, A. Danchiv\",\"doi\":\"10.1109/SMICND.2008.4703433\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a precision over current protective function integrated in a high side power switch. The accuracy improvement is based on using a low offset, autozero amplifier for providing the same bias conditions for both the power and the sense transistors.\",\"PeriodicalId\":6406,\"journal\":{\"name\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2008.4703433\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703433","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High precision over current detection for a high side switch
This paper presents a precision over current protective function integrated in a high side power switch. The accuracy improvement is based on using a low offset, autozero amplifier for providing the same bias conditions for both the power and the sense transistors.
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