强无序MoC薄膜中塞曼驱动的超导体-绝缘体跃迁:扫描隧道显微镜和横向磁场中的输运研究

M. Žemlička, M. Kopčík, P. Szab'o, T. Samuely, J. Kačmarčík, P. Neilinger, M. Grajcar, P. Samuely
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引用次数: 4

摘要

在高度无序的MoC薄膜中,研究了费米动量与平均自由程$k_F*l$的乘积接近于单位的横向磁场中的超导体绝缘体跃迁。令人惊讶的是,塞曼顺磁效应在跃迁两侧的轨道耦合中占主导地位。在超导状态下,高临界磁场$B_{c2}$,它对温度的平方根依赖,以及用扫描隧道显微镜测量的准粒子态密度(DOS)的塞曼分裂都证明了这一点。在$B_{c2}$处,观察到DOS的对数异常。随着磁场的增加,这种异常进一步增强,这可以解释为Altshuler-Aronov DOS的塞曼分裂使系统进入更加绝缘或电阻的状态。自旋相关的Altshuler-Aronov修正也需要用来解释$B_{c2}$以上的输运行为。
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Zeeman-driven superconductor-insulator transition in strongly disordered MoC films: Scanning tunneling microscopy and transport studies in a transverse magnetic field
Superconductor insulator transition in transverse magnetic field is studied in the highly disordered MoC film with the product of the Fermi momentum and the mean free path $k_F*l$ close to unity. Surprisingly, the Zeeman paramagnetic effects dominate over orbital coupling on both sides of the transition. In superconducting state it is evidenced by a high upper critical magnetic field $B_{c2}$, by its square root dependence on temperature, as well as by the Zeeman splitting of the quasiparticle density of states (DOS) measured by scanning tunneling microscopy. At $B_{c2}$ a logarithmic anomaly in DOS is observed. This anomaly is further enhanced in increasing magnetic field, which is explained by the Zeeman splitting of the Altshuler-Aronov DOS driving the system into a more insulating or resistive state. Spin dependent Altshuler-Aronov correction is also needed to explain the transport behavior above $B_{c2}$.
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