{"title":"PdIr合金栅mos场效应晶体管的氨敏感性","authors":"Zhang Weixin, Zhao Lingjuan","doi":"10.1016/0250-6874(89)87069-6","DOIUrl":null,"url":null,"abstract":"<div><p>A new ammonia-sensitive MOSFET based on the use of a sputtered PdIr alloy gate has been developed. The sensitivity and selectivity of this device are compared with the data reported by others. It is shown that the PdIr alloy-gate MOSFETs have a good selectivity for ammonia.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"19 2","pages":"Pages 177-181"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87069-6","citationCount":"6","resultStr":"{\"title\":\"The ammonia sensitivity of PdIr alloy-gate mos field-effect transistor\",\"authors\":\"Zhang Weixin, Zhao Lingjuan\",\"doi\":\"10.1016/0250-6874(89)87069-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A new ammonia-sensitive MOSFET based on the use of a sputtered PdIr alloy gate has been developed. The sensitivity and selectivity of this device are compared with the data reported by others. It is shown that the PdIr alloy-gate MOSFETs have a good selectivity for ammonia.</p></div>\",\"PeriodicalId\":101159,\"journal\":{\"name\":\"Sensors and Actuators\",\"volume\":\"19 2\",\"pages\":\"Pages 177-181\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-08-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0250-6874(89)87069-6\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Sensors and Actuators\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0250687489870696\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2002/1/30 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0250687489870696","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2002/1/30 0:00:00","PubModel":"Epub","JCR":"","JCRName":"","Score":null,"Total":0}
The ammonia sensitivity of PdIr alloy-gate mos field-effect transistor
A new ammonia-sensitive MOSFET based on the use of a sputtered PdIr alloy gate has been developed. The sensitivity and selectivity of this device are compared with the data reported by others. It is shown that the PdIr alloy-gate MOSFETs have a good selectivity for ammonia.
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