硅多层薄膜太阳能电池效率的限制

S. Wenham, M. Green, S. Edmiston, P. Campbell, L. Koschier, C. Honsberg, A. Sproul, D. Thorpe, Z. Shi, G. Heiser
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引用次数: 6

摘要

薄膜晶体硅太阳能电池只有在光捕获能够提供长光程长度的情况下才能实现高效率,同时对所有产生的载流子实现接近统一的收集概率。这需要一种外来材料的支撑衬底,其折射率与硅的光捕获方案兼容。在这种外来的衬底上无法形成具有良好晶体学质量的晶体硅薄膜的成核生长,阻碍了使用传统的单结太阳能电池结构实现高效率器件。并联多结太阳能电池提供了一种从质量非常差的材料中获得高效率的新方法,通过适当的结间距,所有产生的载流子的收集概率接近统一。重掺杂用于最小化来自各层的暗饱和电流贡献,因此允许可观的电压。给出了设计策略、优点、理论预测和实验结果。
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Limits to the efficiency of silicon multilayer thin film solar cells
Thin film crystalline silicon solar cells can only achieve high efficiencies if light trapping can be used to give a long optical path length, while simultaneously achieving near unity collection probabilities for all generated carriers. This necessitates a supporting substrate of a foreign material, with refractive index compatible with light trapping schemes for the silicon. The resulting inability to nucleate growth of crystalline silicon films of good crystallographic quality on such foreign substrates, prevents the achievement of high efficiency devices using conventional single junction solar cell structures. The parallel multijunction solar cell provides a new approach for achieving high efficiencies from very poor quality material, with near unity collection probabilities for all generated carriers achieved through appropriate junction spacing. Heavy doping is used to minimise the dark saturation current contribution from the layers, therefore allowing respectable voltages. The design strategy, corresponding advantages, theoretical predictions and experimental results are presented.
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