超10mhz高开关频率DC-DC变换器的设计与集成

IEICE Trans. Electron. Pub Date : 2022-01-01 DOI:10.1587/transele.2021cti0001

K. Miyaji

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引用次数: 1

摘要

减小无源元件的尺寸，提高系统功率密度，对DC-DC变换器的需求持续而强烈。CMOS工艺和GaN场效应管的进步使DC-DC转换器的开关频率超过10MHz。3d集成磁学的进步将进一步减少占地面积。本文首先概述了10mhz以上的DC-DC变换器，重点介绍了我们在铁基金属复合磁芯电感和氮化镓场效应管三维集成方面的最新研究成果

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Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter

SUMMARY There are continuous and strong demands for the DC-DC converter to reduce the size of passive components and increase the system power density. Advances in CMOS processes and GaN FETs enabled the switching frequency of DC-DC converters to be beyond 10MHz. The ad-vancements of 3-D integrated magnetics will further reduce the footprint. In this paper, the overview of beyond-10MHz DC-DC converters will be provided ﬁrst, and our recent achievements are introduced focusing on 3D- integration of Fe-based metal composite magnetic core inductor, and GaN FET

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IEICE Trans. Electron.

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