用In2O3纳米颗粒调节氧化石墨烯的气敏性能

Surfaces Pub Date : 2022-01-21 DOI:10.3390/surfaces5010006
B. de Lima, A.A. Komorizono, A. Ndiaye, M. Bernardi, J. Brunet, V. Mastelaro
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引用次数: 4

摘要

在这里,我们讨论了In2O3纳米颗粒对还原氧化石墨烯(rGO)气敏电位的影响。采用聚合物前驱体法制备了In2O3纳米颗粒,将In2O3纳米颗粒悬浮液与还原氧化石墨烯悬浮液按不同比例混合制备了纳米复合材料。通过将我们的材料暴露在干燥气流中已知浓度的目标有毒气体中,测试了我们材料的气敏性能。研究结果表明,纳米In2O3增强了氧化石墨烯对O3和NO2等强氧化物质的敏感性,而对NH3的敏感性则有负面影响。此外,我们对H2S的测量表明,当rGO-In2O3纳米复合材料在接近160°C的温度下工作时,In2O3纳米颗粒的浓度可以诱导从p型半导体性质到n型半导体性质的罕见转变。
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Tunning the Gas Sensing Properties of rGO with In2O3 Nanoparticles
Here, we discuss the effect of In2O3 nanoparticles on the reduced graphene oxide (rGO) gas-sensing potentialities. In2O3 nanoparticles were prepared with the polymer precursors method, while the nanocomposites were prepared by mixing an In2O3 nanoparticle suspension with an rGO suspension in different proportions. The gas-sensing performance of our materials was tested by exposing our materials to known concentrations of a target toxic gas in a dry airflow. Our results demonstrate that In2O3 nanoparticles enhance the rGO sensitivity for strong oxidizing species such as O3 and NO2, while a negative effect on its sensitivity for NH3 sensing is observed. Furthermore, our measurements towards H2S suggest that the concentration of In2O3 nanoparticles can induce an uncommon transition from p-type to n-type semiconductor nature when rGO–In2O3 nanocomposites operate at temperatures close to 160 °C.
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