0.85V电源,高PSRR CMOS基准电压,无电阻和放大器,适用于超低功耗应用

Ashutosh Pathy, Adithya Banthi, Zia Abbas
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引用次数: 0

摘要

提出了一种不需要放大器和电阻的超低功耗CMOS基准电压(CVR)。电流发生器电路用于产生与电源无关的电流,以偏置温度补偿电路中的有源负载。在电流发生器电路中,两个关键mosfet的漏源电压相等,通过使用反馈安排来确保参考电压的高PSRR为-75dB。温度补偿是利用工作在亚阈值区域的MOSFET门源的绝对温度互补特性和传统复合对结构的绝对温度成比例特性来实现的。提出的CVR采用台积电180nm工艺设计。该电路在0.85V至2.3V的供电范围内工作,同时产生约0.68V的参考电压。最高温度系数(TC)为184 ppm/°C,最低温度系数(TC)为69 ppm/°C,在1000个样品的蒙特卡罗模拟中注意到不匹配和工艺变化。该电路功耗仅为46nW,适用于超低功耗应用。
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A 0.85V Supply, High PSRR CMOS Voltage Reference without Resistor and Amplifier for Ultra-Low Power Applications
This paper presents an ultra-low power CMOS voltage reference (CVR) which is free of amplifier and resistor. A current generator circuit is used to generate a supply independent current to bias the active load in the temperature compensation circuit. Drain-source voltage of two critical MOSFETs is made equal in the current generator circuit by using a feedback arrangement to ensure a high PSRR of -75dB for the reference voltage. Temperature compensation is achieved by using the complementary to absolute temperature (CTAT) nature of gatesource of a MOSFET operating in the subthreshold region and proportional to absolute temperature (PTAT) nature of conventional composite pair architecture. The proposed CVR is designed in TSMC 180nm technology. The circuit works desirably for a supply range of 0.85V to 2.3V while generating a reference voltage of around 0.68V. Maximum temperature coefficient (TC) of 184 ppm/°C and minimum TC of 69 ppm/°C are noted for mismatch and process variations in the Monte-Carlo simulation for 1000 samples. The circuit consumes only 46nW of power, which makes it suitable for ultra-low power applications.
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