半导体太阳能电池的新效率上限

J. H. Werner, R. Brendel, H. J. Oueisser
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引用次数: 28

摘要

量子效率测量表明,在太阳能电池中,每个吸收光子可以产生一个以上的电子/空穴对。对这一效应的理论考虑导致了光伏能量转换的新的辐射效率上限。从理论上讲,被太阳不集中的黑体辐射照射的电池的效率可能超过43%。对于完全集中的阳光,新的限制在85%以上。这些值在理论上可以用单个半导体实现,从而有效地利用载流子乘法。对载流子倍增的细胞中辐射复合的理论描述也使我们得到了饱和电流密度的一种新的数学描述。
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New upper efficiency limits for semiconductor solar cells
Quantum efficiency measurements showed that more than one electron/hole pair per absorbed photon can be created in a solar cell. Theoretical consideration of this effect leads to new upper radiative efficiency limits for photovoltaic energy conversion. More than 43% efficiency are theoretically possible for cells which are illuminated by the Sun's unconcentrated black body radiation. For sunlight of full concentration, the new limit is above 85%. These values are theoretically possible with a single semiconductor which makes efficient use of carrier multiplication. The theoretical description of radiative recombination in a cell with carrier multiplication leads us also to a novel mathematical description of the saturation current density.
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