{"title":"硅中晶体缺陷的吸污效率研究","authors":"E. Bugiel, M. Kittler, A. Borchardt, H. Richter","doi":"10.1002/PSSA.2210840117","DOIUrl":null,"url":null,"abstract":"The following hypothesis concerning the order of increasing gettering efficiency of different dislocation types is deduced from ebic/TEM investigations: stair rod partials, Shockley partials, complete dislocations, Frank partials. \n \n \n \nAus ebic/TEM-Untersuchungen wird folgende Hypothese bezuglich der Reihenfolge des Anstieges der Gettereffektivitat versehiedener Versetzungstypen ermittelt: Stair Rod Partialversetzungen, Shockley'sche Partialversetzungen, vollstandige Versetzungen, Frank'sche Partialversetzungen.","PeriodicalId":17793,"journal":{"name":"July 16","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1984-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"On the Gettering Efficiency of Crystal Defects in Silicon\",\"authors\":\"E. Bugiel, M. Kittler, A. Borchardt, H. Richter\",\"doi\":\"10.1002/PSSA.2210840117\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The following hypothesis concerning the order of increasing gettering efficiency of different dislocation types is deduced from ebic/TEM investigations: stair rod partials, Shockley partials, complete dislocations, Frank partials. \\n \\n \\n \\nAus ebic/TEM-Untersuchungen wird folgende Hypothese bezuglich der Reihenfolge des Anstieges der Gettereffektivitat versehiedener Versetzungstypen ermittelt: Stair Rod Partialversetzungen, Shockley'sche Partialversetzungen, vollstandige Versetzungen, Frank'sche Partialversetzungen.\",\"PeriodicalId\":17793,\"journal\":{\"name\":\"July 16\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-07-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"July 16\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/PSSA.2210840117\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"July 16","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/PSSA.2210840117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the Gettering Efficiency of Crystal Defects in Silicon
The following hypothesis concerning the order of increasing gettering efficiency of different dislocation types is deduced from ebic/TEM investigations: stair rod partials, Shockley partials, complete dislocations, Frank partials.
Aus ebic/TEM-Untersuchungen wird folgende Hypothese bezuglich der Reihenfolge des Anstieges der Gettereffektivitat versehiedener Versetzungstypen ermittelt: Stair Rod Partialversetzungen, Shockley'sche Partialversetzungen, vollstandige Versetzungen, Frank'sche Partialversetzungen.
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