一种电流源开关驱动的双频低噪声CMOS开关跨导混频器

Benqing Guo, Jing Gong
{"title":"一种电流源开关驱动的双频低噪声CMOS开关跨导混频器","authors":"Benqing Guo, Jing Gong","doi":"10.1109/MWSCAS47672.2021.9531696","DOIUrl":null,"url":null,"abstract":"A dual-band low-noise switched-gm active mixer is proposed with a current-source switch stage. Large sinusoidal LO signal driving is used to avoid the traditional RF port noise transferring by LO harmonics. An LC resonance tank structure is exploited to mitigate the high-frequency limitation by the tail parasitic capacitances charging and discharging behavior. Implemented in a 65 nm CMOS process, the proposed mixer prototype operates at an RF dual-band of 2.4/5.2 GHz and provides a maximal conversion gain of 11.2/11.6 dB and IIP3 of 6.7/5.5 dBm. For 5.2 GHz LO, the dual side-band noise figure (NF) of 4.3/3.3 dB is measured at fIF=10/200 MHz, respectively. The mixer core only consumes 8.4 mW from a 1.2 V supply voltage.","PeriodicalId":6792,"journal":{"name":"2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"1 1","pages":"741-744"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A Dual-Band Low-Noise CMOS Switched-Transconductance Mixer with Current-Source Switch Driven by Sinusoidal LO Signals\",\"authors\":\"Benqing Guo, Jing Gong\",\"doi\":\"10.1109/MWSCAS47672.2021.9531696\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A dual-band low-noise switched-gm active mixer is proposed with a current-source switch stage. Large sinusoidal LO signal driving is used to avoid the traditional RF port noise transferring by LO harmonics. An LC resonance tank structure is exploited to mitigate the high-frequency limitation by the tail parasitic capacitances charging and discharging behavior. Implemented in a 65 nm CMOS process, the proposed mixer prototype operates at an RF dual-band of 2.4/5.2 GHz and provides a maximal conversion gain of 11.2/11.6 dB and IIP3 of 6.7/5.5 dBm. For 5.2 GHz LO, the dual side-band noise figure (NF) of 4.3/3.3 dB is measured at fIF=10/200 MHz, respectively. The mixer core only consumes 8.4 mW from a 1.2 V supply voltage.\",\"PeriodicalId\":6792,\"journal\":{\"name\":\"2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)\",\"volume\":\"1 1\",\"pages\":\"741-744\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-08-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSCAS47672.2021.9531696\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS47672.2021.9531696","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

提出了一种带电流源开关级的双频低噪声开关型有源混频器。采用大正弦本振信号驱动,避免了传统射频端口噪声被本振谐波传递的问题。采用LC谐振槽结构,利用尾部寄生电容充放电特性来缓解高频限制。该混频器原型采用65nm CMOS工艺,工作于2.4/5.2 GHz的RF双频,最大转换增益为11.2/11.6 dB, IIP3为6.7/5.5 dBm。对于5.2 GHz本LO,在fIF=10/200 MHz时测得的双侧带噪声系数(NF)分别为4.3/3.3 dB。混合器核心仅消耗8.4 mW从1.2 V电源电压。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A Dual-Band Low-Noise CMOS Switched-Transconductance Mixer with Current-Source Switch Driven by Sinusoidal LO Signals
A dual-band low-noise switched-gm active mixer is proposed with a current-source switch stage. Large sinusoidal LO signal driving is used to avoid the traditional RF port noise transferring by LO harmonics. An LC resonance tank structure is exploited to mitigate the high-frequency limitation by the tail parasitic capacitances charging and discharging behavior. Implemented in a 65 nm CMOS process, the proposed mixer prototype operates at an RF dual-band of 2.4/5.2 GHz and provides a maximal conversion gain of 11.2/11.6 dB and IIP3 of 6.7/5.5 dBm. For 5.2 GHz LO, the dual side-band noise figure (NF) of 4.3/3.3 dB is measured at fIF=10/200 MHz, respectively. The mixer core only consumes 8.4 mW from a 1.2 V supply voltage.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Hybrid Frequency Domain Simulation Method to Speed-up Analysis of Injection Locked Oscillators SaFIoV: A Secure and Fast Communication in Fog-based Internet-of-Vehicles using SDN and Blockchain Capacitor-Less Memristive Integrate-and-Fire Neuron with Stochastic Behavior Polynomial Filters with Controllable Overshoot In Their Step Transient Responses A low kickback noise and low power dynamic comparator
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1