在基本吸收带边缘附近的Ga-Ge-Sb-Se光学特性

Ю. С. Кузюткина, Н. Д. Паршина, Е. А. Романова, В. И. Кочубей, М. В. Суханов, Л А Кеткова, В. С. Ширяев
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摘要

本文用红外光谱法测量了掺入稀土离子Tb3+或Dy3+的Ga5Ge20Sb10Se65组成的硫系玻璃在0.7 ~ 1.5 μm波长范围内的光学响应。对表征玻璃基吸收带边缘的光学带隙能量、乌尔巴赫尾参数和弱吸收尾参数进行了评价。研究发现,在乌尔巴赫尾范围内,低浓度(质量%为0.3)掺杂对玻璃的光学带隙能量和光学性能没有影响,但在弱吸收尾范围内,玻璃的光学响应取决于活化剂的浓度。用直接熔融法生产的玻璃的结晶也取决于活化剂的浓度。在掺杂Dy3+的玻璃中,离子的吸收带位于玻璃的弱吸收尾的范围内,使得离子和载流子的间隙态之间的能量转移成为可能。
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Оптические свойства халькогенидных стекол системы Ga-Ge-Sb-Se, легированных ионами тербия и диспрозия, вблизи края полосы фундаментального поглощения
In the paper, results of measurements of the optical response of chalcogenide glasses of the Ga5Ge20Sb10Se65 composition doped with rare-earth ions Tb3+ or Dy3+, in the wavelength range of 0.7 – 1.5 μm by the method of IR spectroscopy are presented. Parameters characterizing the fundamental absorption band edge of the glasses - optical bandgap energy, Urbach tail parameter and weak absorption tail parameter - have been evaluated. It has been found that doping in low concentrations (up to 0.3 mass%) does not influence the optical bandgap energy and optical properties of the glasses in the range of the Urbach tail, but in the range of the weak absorption tail, optical response of the glasses depends on the activator concentration. Crystallization of the glasses produced by the direct melting method also depends on the activator concentration. In the glasses doped with Dy3+, absorption bands of the ion are located in the range of the weak absorption tail of the glass that makes possible energy transfer between the ions and the gap states of the charge carriers.
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