自由电子激光激发InSb产生的三次谐波

T. Phan, Kosaku Kato, G. Isoyama, M. Yoshimura, S. Fujioka, M. Nakajima
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引用次数: 4

摘要

利用频率为4thz的自由电子激光强束流泵浦InSb晶体,在室温下获得了效率高达$4 \math {x}10^{-4}$的强三次谐波产生(THG)。由于InSb中带结构的非抛物性,THG可以来源于非线性三阶电流。InSb产生的THG信号明显高于InAs,而InAs的能带结构形状更接近抛物线。在370k时,由于自由载流子的增加,THG信号增加了2.5倍。
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Third harmonic generation from InSb excited by Free Electron Laser
Using intense beam with frequency 4 THz from Free Electron Laser to pump the InSb crystal, we obtained strong third harmonic generation (THG) with efficiency up to $4 \mathrm{x}10^{-4}$ at room temperature. The THG can originate from the nonlinear third order electric current due to non-parabolicity of the band structure in InSb. InSb yields significantly higher THG signal compared with InAs whose shape of energy band structure is more parabolic. The THG signal increases up to 2.5 times at 370 K due to the increase of the free carrier.
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