基于硅纳米线阵列的热电发生器性能评价

K. Y. Lee, David B Brown, Satish Kumar
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引用次数: 3

摘要

热电发电机(teg)可以通过从芯片废热中发电来提高电子封装的净功耗。在本研究中,建立了基于硅纳米线(Si-NW)的嵌入式teg电子封装的三维计算模型,并评估了关键几何参数、接触电阻和热性能(如Si-NW的间距长度和长度)、Si-NW界面的电接触电阻率、teg封装界面的热接触电阻率以及填充材料的导热系数对发电的影响。分析表明,在不同的实验研究中,改变一些关键参数的电流值对发电量的影响,例如,将节距长度从400 nm减小到200 nm,发电量增加一倍,将Si-NW长度从1 μm增加到8 μm,发电量增加三倍,接触电阻率从1.0×10-11 Ω-m2减小一个数量级,发电量增加两倍。本研究估计,利用不同实验研究中获得的最佳热电性能,8 μm长的Si-NWs的能量转换效率为0.02%。最后,分析提出了Si-NW TEGs的关键参数,这些参数应该是未来研究的重点。
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Performance evaluation of silicon nanowire arrays based thermoelectric generators
Thermoelectric generators (TEGs) can improve the net power consumption of electronic packages by generating power from the chip waste heat. In this study, a 3D computational model of electronic package with silicon nanowire (Si-NW) based embedded TEGs has been developed and the effect of crucial geometric parameters, contact resistances and thermal properties such as pitch length and length of Si-NWs, the electrical contact resistivity at Si-NW interface, thermal contact resistivity at TEG-package interface, and filling material thermal-conductivity on power generation has been evaluated. The analysis has shown how modifying some crucial parameters from their current values in different experimental studies affect power generation, e.g., decreasing the pitch length from 400 nm to 200 nm double the power generation, increasing the Si-NW length from 1 μm to 8 μm increases power generation by a factor of three and decreasing contact resistivity by one order of magnitude from 1.0×10-11 Ω-m2 enhances the power generation by a factor of two. This study has estimated the energy conversion efficiency of 0.02 % for 8 μm long Si-NWs using the best thermo-electric properties available from different experimental studies. Finally, the analysis provides insights into the crucial parameters of Si-NW TEGs which should be focus of the future studies.
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