挥发性配位化合物CVD合成HTSC薄膜

S. Volkov, V. Zub, O. N. Balakshina, E. Mazurenko
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引用次数: 0

摘要

采用PE MOCVD技术,以α,α′-二吡啶为前驱体,以乙酰丙酮酸铜、钇和钡为加合物,制备了具有高c轴取向的yba2cu3o7 -x HTSC薄膜。在降低衬底温度的条件下,在n2和o2气体反应物混合物中沉积原位膜。在SrTiO 3, ZrO 2 (Y)和MgO衬底上制备的HTSC薄膜具有相当高的电特性(例如jc10 4 - 10 5 A/ cm2)。讨论了β-二酮酸加合物作为等离子体增强化学气相沉积超导薄膜前驱体的问题。
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CVD Synthesis of HTSC Films Using Volatile Coordination Compounds
Thin HTSC films of YBa 2 Cu 3 O 7-x with high c-axis orientation have been grown using PE MOCVD technique and adducts of copper, yttrium and barium acetylacetonate with α,α'-dipyridyl as precursors. In-situ films were deposited in N 2 and O 2 gas reactant mixture at reduced substrate temperatures. HTSC films prepared on SrTiO 3 , ZrO 2 (Y) and MgO substrates have rather high electric characteristics (e.g. j c 10 4 - 10 5 A/cm 2 ). The problem of β-diketonate adducts using as precursors for plasma enhanced chemical vapor deposition of superconductive films was discussed.
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