化学浴法制备金属硫族化物薄膜。42岁的一部分。不同配体存在下,硒代硫酸钠和硒脲沉积PbSe区域的实验验证

L. Maskaeva, V. M. Yurk, Anastasia V. Belceva, I. V. Zarubin, A. D. Kutyavina, V. F. Markov
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引用次数: 2

摘要

对PbSe薄膜合成反应体系中的离子平衡进行了计算。研究了柠檬酸钠与液氨和硒代硫酸钠(体系1)或硒代脲(体系2)作为硫代剂、乙胺、乙酸钠和硒代脲(体系3)的三种反应体系。在体系1和体系2中,在pH范围内阻止硒代硫酸钠和硒代脲分解快速生成PbSe的主要先导化合物是羟基柠檬酸配合物。在该体系中,与乙二胺和醋酸离子的3种配合物发挥了最重要的作用。考虑临界核的大小,通过热力学计算来评价主相和杂质相(金属氢氧化物和氰酰胺)的沉积条件,得到了所研究反应体系中PbSe、Pb(OH)2、PbCN2的边界条件和生成区域。计算结果以“金属盐初始浓度指示剂-溶液pH值-配体浓度”和“金属盐初始浓度指示剂-溶液pH值-硫化剂浓度”坐标的三维依赖关系表示。通过计算和初步实验,得出了化学浴沉积PbSe薄膜的反应混合物的组成,除主要成分外,还含有一种碘化铵形式的掺杂剂。在温度为353 K(体系1和体系2)、308 K(体系3)的条件下,在玻璃衬底上合成了厚度为~500 ~ ~700 nm的均匀PbSe层。膜中主要元素Pb、Se的比值为0.98 ~ 1.32,碘含量为7 ~ 11at。%取决于反应液的组成。
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Chemical bath synthesis of metal chalcogenide films. Part 42. Experimental verification of the deposition regions of PbSe by sodium selenosulfate and selenourea in the presence of various ligands
Calculation of ionic equilibria in the reaction system for synthesis of PbSe thin films was carried out. Three reaction systems containing the following combinations of reagents were considered: sodium citrate with liquid ammonia and sodium selenosulfate (system 1) or selenourea (system 2) used as chalcogenizer, ethilendiamine, sodium acetate and selenourea (system 3).The main lead complex compoundsprevented the fast PbSe formation in system 1 and 2 in region of pH of intensive selenosulfate and selenourea decomposition were hydroxo-citrate complexes. In the system 3 complexes with ethilendiamine and acetate-ions played the most significant role. For evaluating the deposition conditions of the main and impurity phases (metal hydroxides and cyanamides) by thermodynamic calculations taking into account the sizes of critical nucleis, the boundary conditions and regions of formation of PbSe, Pb(OH)2, PbCN2 in the studied reaction systems were found. The calculation results are presented in the form of three-dimensional dependencies in the coordinates “indicator of the initial concentration of the metal salt – pH of the solution – ligand concentration” and “indicator of the initial concentration of the metal salt – pH of the solution – concentration of the chalcogenizer”. Based on the calculations and preliminary experiments, the compositions of the discussed reaction mixtures were formed for the chemical bath deposition of PbSe films, which, in addition to the main components, included a dopant in the form of ammonium iodide. In the synthesis process at a temperature of 353 K (system 1 and 2) for 60 minutes and 308 K for 90 minutes (system 3), using all the studied reaction systems on glass substrates, homogeneous PbSe layers with a thickness of ~500 to ~700 nm were obtained. The ratio between the main elements of Pb and Se in the film varies between 0.98-1.32, and the iodine content is 7-11 at.% depending on the composition of the reaction bath.
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