Variability study with CD-SEM metrology for STT-MRAM: correlation analysis between physical dimensions and electrical property of the memory element
待确认10由 bit5i54 发布于 2024/10/17 17:18:04
DOI:10.1117/12.2257908
作者:T. Ohashi, A. Yamaguchi, K. Hasumi, O. Inoue, M. Ikota, G. Lorusso, G. Donadio, F. Yasin, Siddharth Rao, G. Kar
文献类型:期刊论文
补充材料:只需要正文
International Society for Optics and Photonics (SPIE)