Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.

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Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices

Pub Date : 2005-12-12 DOI: 10.1109/ESSDER.2005.1546711 M. Rudan, S. Reggiani, E. Gnani, G. Baccarani, C. Corvasce, D. Barlini, M. Ciappa, W. Fichtner, M. Denison, N. Jensen, G. Groos, M. Stecher

The role of nitrogen incorporation in Hf-based high-k dielectrics: reduction in electron charge traps

Pub Date : 2005-12-12 DOI: 10.1109/ESSDER.2005.1546620 N. Umezawa, K. Shiraishi, K. Torii, M. Boero, T. Chikyow, H. Watanabe, K. Yamabe, T. Ohno, K. Yamada, Y. Nara

Silicidation induced strain phenomena in totally silicided (TOSI) gate transistors

Pub Date : 2005-12-12 DOI: 10.1109/ESSDER.2005.1546676 A. Mondot, M. Muller, D. Aimé, B. Froment, F. Cacho, A. Talbot, F. Leverd, M. Rivoire, Y. Morand, S. Descombes, P. Besson, A. Toffoli, S. Pokrant, T. Skotnicki

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