2012 IEEE International Integrated Reliability Workshop Final Report

PMOS NBTI analysis of a 45nm CMOS-SOI process with nitrided gate dielectric

Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468955 K. Geoghegan, J. Siddiqui, Todd R. Weatherford

Effect of crystallinity on endurance and switching behavior of HfOx-based resistive memory devices

Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468907 J. Capulong, B. Briggs, S. Bishop, M. Hovish, R. Matyi, N. Cady

Optimized data assessment for hot carrier and Fowler-Nordheim stresses on thick MOS gate oxides with plasma process induced charging damage

Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468927 A. Martin, A. Koten, M. Schwerd