Monte Carlo Simulation for Radiometric Temperature Measurement in Rapid Thermal Processing

Yongmao Zhou, Y. J. Shen, Zhuomin M. Zhang, B. Tsai, D. Dewitt
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引用次数: 2

Abstract

This work employs a Monte Carlo method to study the radiative process in a rapid thermal processing (RTP) furnace. A “true” effective emissivity, accounting for the directional optical properties, is defined and predicted in order to determine the wafer temperature from the measured spectral radiance temperature using light-pipe radiation thermometry. The true effective emissivity is the same as the hemispherical effective emissivity for diffuse wafers, in which case the Monte Carlo model gives the same results as the net-radiation method. Deviations exist between the hemispherical effective emissivity and the true effective emissivity for specular wafers because the effective emissivity is directional dependent. This research will help reduce the uncertainty in the temperature measurement for RTP furnaces to meet the future requirements for integrated circuit manufacturing.
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快速热加工中辐射测温的蒙特卡罗模拟
本文采用蒙特卡罗方法研究了快速热加工(RTP)炉的辐射过程。定义和预测了考虑定向光学特性的“真正”有效发射率,以便使用光管辐射测温法从测量的光谱辐射温度确定晶圆温度。漫射晶圆的真实有效发射率与半球面有效发射率相同,在这种情况下,蒙特卡罗模型与净辐射方法得到相同的结果。镜面晶圆的半球形有效发射率与真实有效发射率之间存在偏差,因为有效发射率与方向有关。本研究将有助于降低RTP炉温度测量的不确定性,以满足未来集成电路制造的要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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