Yun Zhang, Xiaodong Wang, B. Wang, Liwei Hou, Xiaoyao Chen, Yawei Kuang, M. Pan
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引用次数: 1
Abstract
Design of ion implantation scheme for the planar GaAs blocked-impurity-band (BIB) detectors is performed by numerical simulation. The device structure and the preparation process are presented. It is demonstrated that the implanted Si ion concentration of the absorbing region and the contact region are 5×1015 cm-3 and 4×1019 cm-3, respectively, and can be implemented by four-step implantation with different ion energies and doses.
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