A differential resonant barometric pressure sensor using SOI-MEMS technology

Abstract

This paper presents a resonant barometric pressure sensor based on SOI-MEMS technology. In this device, pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in “H” type doubly-clamped micro beams, leading to resonant frequency shift. In device fabrication, SOI-MEMS fabrication processes were utilized, where a new modified buffered hydrofluoric acid (BHF) solution was used to remove the buried oxide layer and release the suspended resonant beams. Experimental results recorded a device resolution of 10Pa, with the nonlinearity of 0.03%, and the temperature coefficient of -0.04% F.S/°C in the range of -40°C to 30°C. The long-term stability error of the proposed device was quantified as 0.05% F.S over the past 3 months.