Innovative passivation for reducing degradation of a-Si/uc-Si tandem photovaltaic module

Abstract

The innovative passivation treatment has been developed for increasing the stabilized power of standard a-Si/μc-Si tandem module and building-integrated photovoltaic (BIPV) via well passivation of μc-Si material. By adopting external passivation technique, the open-circuit voltage (Voc) almost keeps in constant, furthermore, a significant improvement of Voc (∼3%) and fill factor (∼5%) could be obtained as comparing to reference ones. In the present work, a well passivation treatment for microcrystalline Si to prevent the post-oxidation of the cracks has been reported. About 9 % of improvement of degradation behavior and an outstanding performance of BIPV (93%) could be observed by this unique technique.