Wavelet-based calculation of the transmission coefficient for tunneling events in Tunnel-FETs

A. Farokhnejad, M. Graef, A. Kloes
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引用次数: 2

Abstract

Recently, the Tunnel-FET is gaining interest due to its possibility to overcome the 60 mV/dec subthreshold slope limitation of the standard MOSFET. Due to its band-to-band (B2B) tunneling-based current transport mechanism, the requirements for sufficient tunneling models are raising. By taking into account various barrier shapes, tunneling distances and energy levels, the wavelet-based calculation of the transmission coefficient offers the possibility to calculate tunneling events as B2B tunneling at the junctions and gate leakage current in an accurate way. A comparison of the wavelet solution with the exact solution of the Schrödinger equation for rectangular barriers and the Wentzel-Kramers-Brillouin (WKB) approximation for triangular shaped barriers is presented in this paper.
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隧道场效应管隧穿事件透射系数的小波计算
最近,隧道场效应管由于可以克服标准MOSFET的60 mV/dec亚阈值斜率限制而引起了人们的兴趣。由于其基于带对带(B2B)隧道的电流传输机制,对足够的隧道模型的要求越来越高。通过考虑各种势垒形状、隧穿距离和能级,基于小波的传输系数计算可以准确地计算出B2B隧穿和栅漏电流等隧穿事件。本文比较了矩形势垒的小波解与Schrödinger方程的精确解和三角形势垒的wentzel - kramer - brillouin (WKB)近似。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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