{"title":"Design and analysis of a 3.1–10.6 GHz UWB low noise amplifier with current reused technique","authors":"Meysam Azimi Roein","doi":"10.1109/KBEI.2019.8735015","DOIUrl":null,"url":null,"abstract":"Two ultra wideband low noise amplifiers (LNAs) are presented. A common source topology is adopted for input stage to achieve wideband input matching, while a cascode stage is used as the second stage to provide power gain at high frequencies. The first work is common source with a reuse PMOS current source. It achieves a maximum power gain of 15.2dB and 3.7dB minimum NF. The power consumption is 16 mW from a 1.8 v supply. The second work is current reused technique that we use an NMOS replacing the feedback resistance to achieve flat gain. It achieves a maximum power gain of 10.5dB and 2.7dB minimum NF.","PeriodicalId":339990,"journal":{"name":"2019 5th Conference on Knowledge Based Engineering and Innovation (KBEI)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 5th Conference on Knowledge Based Engineering and Innovation (KBEI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/KBEI.2019.8735015","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Two ultra wideband low noise amplifiers (LNAs) are presented. A common source topology is adopted for input stage to achieve wideband input matching, while a cascode stage is used as the second stage to provide power gain at high frequencies. The first work is common source with a reuse PMOS current source. It achieves a maximum power gain of 15.2dB and 3.7dB minimum NF. The power consumption is 16 mW from a 1.8 v supply. The second work is current reused technique that we use an NMOS replacing the feedback resistance to achieve flat gain. It achieves a maximum power gain of 10.5dB and 2.7dB minimum NF.