High-temperature SOI-based gate driver IC for WBG power switches

Abstract

High-temperature integrated circuits fill a need in applications where there are obvious benefits to reduced thermal management or where circuitry is placed away from temperature extremes. Examples of these applications include aerospace, automotive, power generation, and well-logging. This work focuses on automotive applications in which the growing demand for hybrid electric vehicles (HEVs), Plug-in-hybrids (PHEVs), and Fuel-cell vehicles (FCVs) has increased the need for high-temperature electronics that can operate at the extreme ambient temperatures that exist under the hood of these vehicles, which can be in excess of 150°C. Silicon carbide (SiC) and other wide-bandgap power switches that can function at these temperature extremes are now entering the market. To take full advantage of their potential, high-temperature capable circuits that can also operate in these environments are required.