A droop measurement built-in self-test circuit for digital low-dropout regulators

Aydin Dirican, Cagatay Ozmen, M. Margala
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引用次数: 2

Abstract

Today's highly integrated system-on-chips (SOCs) employ several integrated voltage regulators to achieve higher power efficiency and smaller board area. Testing of voltage regulators is essential to validate the final product. In this work, we present a unique droop measurement built-in self-test (BIST) circuit for digital low-dropout regulators (DLDOs). The proposed BIST system is capable of storing transient droop information with less than 1.05 % error for droop voltages ranging from 45 mV to 520 mV for nominal DLDO output voltage of 1.6 V where supply voltage is 1.8 V. Additionally, a reuse based 10-bit successive-approximation (SAR) analog-to-digital converter (ADC) is incorporated to generate a digital output corresponding to the stored droop information as the BIST measurement result. The on-chip DLDO decoupling capacitor (∼1 nF) is reconfigured as a charge scaling array for ADC operation during testing to increase reusability. The proposed BIST circuit is designed with 0.18 μm CMOS process in Cadence Virtuoso and verified with corner simulations.
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一种用于数字低压差稳压器的内置自检电路
今天的高度集成的系统芯片(soc)采用几个集成的电压调节器,以实现更高的功率效率和更小的板面积。电压调节器的测试对于验证最终产品至关重要。在这项工作中,我们提出了一种独特的数字低降稳压器(dldo)的下垂测量内置自检(BIST)电路。在供电电压为1.8 V的DLDO标称输出电压为1.6 V时,该系统能够在45 mV至520 mV的电压范围内存储暂态下垂信息,误差小于1.05%。此外,采用基于重用的10位连续逼近(SAR)模数转换器(ADC),生成与存储的垂降信息相对应的数字输出作为BIST测量结果。片上DLDO去耦电容器(~ 1 nF)被重新配置为ADC操作的电荷缩放阵列,以提高测试期间的可重用性。在Cadence Virtuoso中采用0.18 μm CMOS工艺设计了BIST电路,并进行了拐角仿真验证。
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