{"title":"GENERATION OF THERMODONORS IN SILICON DOPED WITH NICKEL DURING GROWTH","authors":"K. Ismailov, E. J. Kosbergenov","doi":"10.37681/2181-1652-019-x-2021-2-2","DOIUrl":null,"url":null,"abstract":"In this work, it is shown that the introducti on of nickel atoms in the process of growing a silicon crystal makes it possible to obtain a mate rial with stable electrophysical parameters during thermal annealing at a temperature of 450 Ԩand durations t = 0.5÷25 hours. This is the most cost-effective way to create a material for semiconductor devices with stable parameters","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37681/2181-1652-019-x-2021-2-2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this work, it is shown that the introducti on of nickel atoms in the process of growing a silicon crystal makes it possible to obtain a mate rial with stable electrophysical parameters during thermal annealing at a temperature of 450 Ԩand durations t = 0.5÷25 hours. This is the most cost-effective way to create a material for semiconductor devices with stable parameters
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