Carbon Nanotube Metal Cathode for Microwave and mm Wave Device

M. Chung, Bohr‐Ran Huang, Chih-chia Chang
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Abstract

Summary form only given. Field Emission cathode possesses certain advantages over the rmionic emission cathode: smaller FWHM of emission energy, smaller size, no need for filament heating power supply, an d possibility of higher pulsed current. The small field emission energy spread and small size are particularly important as frequency goes up into mm, sub-mm or THz regime in devices like Clinotron or Orotron, where a sheet beam interacts with periodic grating at inclined or parallel trajectory. Carbon nanotube (CNT) has been known for its field emission property. We present a new method to make CNT cathode by hot-bonding CNT with BGA balls on metal surface. This method differs from the spray or print approach in the past, and delivers better adhesion capability in high field. Turn on field (at 1 muA/cm2) as low as 1 V/mum has been achieved, field enhancement factor beta reaches 3900, and dynamic resistance is about 1.28 MOmega at current below 1 mA. Four 0.5 mm2 emission sites emit 0.1 mA current at 400 V bias with 200 mum cathode-anode distance. Current increases as BGA density multiplies. This cathode can be made into various shapes, and defective ball can be repaired through reflow process. Spatial uniformity of emission sites can also be achieved with special emission site shielding structure at the expense of applied field.
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微波和毫米波器件用碳纳米管金属阴极
只提供摘要形式。场发射阴极与离子发射阴极相比,具有发射能量的频宽比更小、尺寸更小、不需要灯丝加热电源、可以产生更高的脉冲电流等优点。在像Clinotron或Orotron这样的设备中,当频率上升到毫米、亚毫米或太赫兹时,小的场发射能量传播和小尺寸尤为重要,在这些设备中,薄片光束与周期性光栅在倾斜或平行轨道上相互作用。碳纳米管(CNT)以其场发射特性而闻名。提出了一种在金属表面热键合碳纳米管与BGA球的方法。该方法不同于以往的喷涂或打印方法,在高场下具有更好的粘附能力。已实现低至1 V/ cm2的场(1 muA/cm2),场增强因子beta达到3900,在低于1 mA的电流下,动态电阻约为1.28 momea。四个0.5 mm2的发射点在400 V偏置下发射0.1 mA电流,阴极-阳极距离为200 mum。电流随着BGA密度的增加而增加。这种阴极可以制成各种形状,有缺陷的球可以通过回流工艺修复。采用特殊的发射点屏蔽结构,以牺牲应用场为代价,也可以实现发射点的空间均匀性。
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