Properties behavior of InAs quantum dots and InGaAs quantum well on the photodetector

Abstract

In this paper a photodetector model containing InAs Quantum dots (QDs) and InGaAs Quantum well (QW) is discussed. We discover absorption peaks of InAs QDs and InGaAs QW in the photoluminescence (PL) spectra simulated. The photocurrent spectra shows that the most appropriate wavelength which can get best photocurrent response is 0.86μm and photocurrent response under positive bias is better than the negative bias. It can be seen from the current-voltage curve that current-voltage characteristics of photodetector model have resonant tunneling phenomenon under both the positive bias and negative bias, however the function part is different which is energy level of QDs under the positive bias while energy level of wetting layer under the negative bias.