L. Anand, N. Kumar, S. Pragash, M. F. Ain, S. Hassan
{"title":"High efficiency 600-mW pHEMT balance amplifier design with load pull technique","authors":"L. Anand, N. Kumar, S. Pragash, M. F. Ain, S. Hassan","doi":"10.1109/RFM.2008.4897432","DOIUrl":null,"url":null,"abstract":"This paper provides suitable design method to achieve high efficiency of single balanced amplifier based on load pull technique. The device technology is using pseudomorphic High Mobility Electron Transistor (pHEMT) having gate-width of 6400-mum. Power-aided-efficiency (PAE) of 60-70 %, output power of 1 W and gain of 14 dB for the entire range 1-1.5 GHz is achieved at simulation level. Degradation of 30 % of PAE, 4 mW of output power and 5 dB of gain have been experienced at measurement level.","PeriodicalId":329128,"journal":{"name":"2008 IEEE International RF and Microwave Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International RF and Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFM.2008.4897432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper provides suitable design method to achieve high efficiency of single balanced amplifier based on load pull technique. The device technology is using pseudomorphic High Mobility Electron Transistor (pHEMT) having gate-width of 6400-mum. Power-aided-efficiency (PAE) of 60-70 %, output power of 1 W and gain of 14 dB for the entire range 1-1.5 GHz is achieved at simulation level. Degradation of 30 % of PAE, 4 mW of output power and 5 dB of gain have been experienced at measurement level.
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