A Simplistic Approach to the Analysis of Transistor Amplifiers

B. Wilamowski, J. Irwin
{"title":"A Simplistic Approach to the Analysis of Transistor Amplifiers","authors":"B. Wilamowski, J. Irwin","doi":"10.1201/B10602-21","DOIUrl":null,"url":null,"abstract":"The traditional approach to the small-signal analysis of transistor amplifiers employs the transistor models with dependent sources, illustrated in Figure 18.1, for both the MOS and BJT devices. In this chapter, techniques for the analysis of transistor circuits will be demonstrated without the use of a small-signal equivalent circuit containing dependent sources. Because of the similarities inherent in the two circuit configurations shown in Figure 18.1, the following analyses will address both MOS and BJT devices in unison. As a general rule, the small signal parameters are calculated as a function of the transistor currents. In view of that fact, consider now each type of device.","PeriodicalId":354437,"journal":{"name":"Fundamentals of Industrial Electronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fundamentals of Industrial Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1201/B10602-21","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The traditional approach to the small-signal analysis of transistor amplifiers employs the transistor models with dependent sources, illustrated in Figure 18.1, for both the MOS and BJT devices. In this chapter, techniques for the analysis of transistor circuits will be demonstrated without the use of a small-signal equivalent circuit containing dependent sources. Because of the similarities inherent in the two circuit configurations shown in Figure 18.1, the following analyses will address both MOS and BJT devices in unison. As a general rule, the small signal parameters are calculated as a function of the transistor currents. In view of that fact, consider now each type of device.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
晶体管放大器的简单分析方法
对于MOS和BJT器件,晶体管放大器的小信号分析的传统方法采用具有依赖源的晶体管模型,如图18.1所示。在本章中,分析晶体管电路的技术将在不使用包含相关源的小信号等效电路的情况下进行演示。由于图18.1所示的两种电路配置中固有的相似性,下面的分析将同时处理MOS和BJT器件。一般来说,小信号参数是作为晶体管电流的函数来计算的。鉴于这一事实,现在考虑每一种类型的设备。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Signal Processing Laplace Transforms MEMS Technologies MEMS Devices Field Effect Transistors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1