Memristive synaptic plasticity in Pr0.7Ca0.3MnO3 RRAM by bio-mimetic programming

N. Panwar, D. Kumar, N. Upadhyay, P. Arya, U. Ganguly, B. Rajendran
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引用次数: 21

Abstract

In this paper, the authors have demonstrated various forms of timing dependent plasticity in PCMO based RRAM devices using very simple programming pulses leveraging its memristive characteristics. Thanks to the intrinsic rectifying nature of their devices in the ON state, they have also shown that our synapse circuit does not require a current-limiting bipolar diode to prevent parasitic programming. These devices thus can be integrated in cross-bar arrays to build neuromorphic systems capable of performing a wide variety of supervised and unsupervised learning tasks.
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基于仿生编程的Pr0.7Ca0.3MnO3 RRAM记忆突触可塑性研究
在本文中,作者利用非常简单的编程脉冲利用其记忆特性,展示了基于PCMO的RRAM器件中各种形式的时序相关可塑性。由于他们的器件在ON状态下具有固有的整流特性,他们还表明,我们的突触电路不需要限流双极二极管来防止寄生编程。因此,这些设备可以集成在交叉条阵列中,以构建能够执行各种监督和无监督学习任务的神经形态系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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