Exploring optimum growth window for high quality InAs/GaInSb superlattice materials

Abstract

We report ternary growth studies to develop a largely strained InAs/InGaSb superlattice (SL) material for very long wavelength infrared (VLWIR) detection. We select a SL structure of 47.0 Å InAs/21.5 Å In0.25Ga0.75Sb that theoretically designed for the greatest possible detectivity, and tune growth conditions for the best possible material quality. Since material quality of grown SLs is largely influenced by extrinsic defects such as nonradiative recombination centers and residual background dopings in the grown layers, we investigate the effect of growth temperature (Tg) on the spectral responses and charge carrier transports using photoconductivity and temperature-dependent Hall effect measurements. Results indicate that molecular beam epitaxy (MBE) growth process we developed produces a consistent gap near 50 meV within a range of few meV, but SL spectral sensing determined by photoresponse (PR) intensity is very sensitive to the minor changes in Tg. For the SLs grown from 390 to 470 °C, a PR signal gradually increases as Tg increases from 400 to 440 °C by reaching a maximum at 440 °C. Outside this growth window, the SL quality deteriorates very rapidly. All SLs grown for this study were n-type, but the mobility varied in a variety of range between 11,300 and 21 cm2/Vs. The mobility of the SL grown at 440 °C was approximately 10,000 V/cm2 with a sheet carrier concentration of 5 × 1011 cm-2, but the mobility precipitously dropped to 21 cm2/Vs at higher temperatures. Using the knowledge we learned from this growth set, other growth parameters for the MBE ternary SL growth should be further adjusted in order to achieve high performance of InAs/InGaSb materials suitable for VLWIR detection.