A 40 Gbps broadband amplifler for modulator- driver applications using a GaAs HBT technology

C. Meliani, M. Rudolph, J. Hilsenbeck, W. Heinrich
{"title":"A 40 Gbps broadband amplifler for modulator- driver applications using a GaAs HBT technology","authors":"C. Meliani, M. Rudolph, J. Hilsenbeck, W. Heinrich","doi":"10.1109/BIPOL.2004.1365800","DOIUrl":null,"url":null,"abstract":"A broadband amplifier suitable for high-bitrate modulator driver applications is fabricated using a GaAs-HBT process with f r and fmu of 45 and I 7 0 GHr, respectively. The design takes optimum advantage of the available technology, to obtain a broadband gain of 12 dB and a 3dB cut-off-frequency of 24 GHL A smooth decrease around f c is chosen in order to keep a positive gain value at higher frequencies and a relatively frat group delay, which is a key condition for the eye-diagram opening. This appears to be the best way to combine high bitrate signal amplification with sujj7ciently high output voltage for a relatively low f r HBT technology, compared to others, as InP HEMT or GaAs pHEMT. According to the NRZ power spectra, 40 Gb/s signal amplification is possible with such characteristics since the smooth slope condition is fulfilled. Eye diagram measurements at 40 Gb/s with several input signal swings are presented A 4 Vpp output well-opened 40 Gb/s eye diagram is obtained with a large signalgain of 12 dB. This is a promising resuit for 40 Gb/s modulator driver applications using low-cost standard technologies and an interesting perfomiance in terms of a marimurn broadband5 to (f7, fnp3 ratio.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"283 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

A broadband amplifier suitable for high-bitrate modulator driver applications is fabricated using a GaAs-HBT process with f r and fmu of 45 and I 7 0 GHr, respectively. The design takes optimum advantage of the available technology, to obtain a broadband gain of 12 dB and a 3dB cut-off-frequency of 24 GHL A smooth decrease around f c is chosen in order to keep a positive gain value at higher frequencies and a relatively frat group delay, which is a key condition for the eye-diagram opening. This appears to be the best way to combine high bitrate signal amplification with sujj7ciently high output voltage for a relatively low f r HBT technology, compared to others, as InP HEMT or GaAs pHEMT. According to the NRZ power spectra, 40 Gb/s signal amplification is possible with such characteristics since the smooth slope condition is fulfilled. Eye diagram measurements at 40 Gb/s with several input signal swings are presented A 4 Vpp output well-opened 40 Gb/s eye diagram is obtained with a large signalgain of 12 dB. This is a promising resuit for 40 Gb/s modulator driver applications using low-cost standard technologies and an interesting perfomiance in terms of a marimurn broadband5 to (f7, fnp3 ratio.
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采用GaAs HBT技术的调制器驱动应用的40gbps宽带放大器
采用GaAs-HBT工艺制备了一种适用于高比特率调制器驱动应用的宽带放大器,fr和fmu分别为45和70 GHr。该设计充分利用了现有的技术优势,获得了12 dB的宽带增益和24 GHL的3dB截止频率。为了在较高的频率下保持正增益值和相对平坦的群延迟,选择了f c左右的平滑衰减,这是眼图打开的关键条件。与其他技术(如InP HEMT或GaAs pHEMT)相比,这似乎是将高比特率信号放大与相对较低的HBT技术的高输出电压相结合的最佳方法。根据NRZ功率谱,由于满足平滑斜率条件,该特性可以实现40 Gb/s的信号放大。给出了在40gb /s下,在多个输入信号波动下的眼图测量结果。在12db的大信号增益下,得到了一个4vpp的输出良好的40gb /s眼图。对于使用低成本标准技术的40gb /s调制器驱动应用来说,这是一个有希望的结果,并且在海事宽带5到(f7, fnp3)比率方面具有有趣的性能。
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