{"title":"Optically controlled transconductance amplifier","authors":"B. K. Mishra, P. Jain, S. C. Patil, G. Phade","doi":"10.1145/1980022.1980266","DOIUrl":null,"url":null,"abstract":"This paper presents Y parameter analysis for optically gated MOSFET at RF frequency. Simulation is done using MATLAB and analysis for Y parameter is done under dark and illuminated condition for varying optical power. It has been seen that device transconductance is highly influenced by optical illumination even for small optical power. Optical effects are mainly due to lowering of surface potential in presence of illumination which is termed as photon induced barrier lowering. The result in dark condition are compared with reported results to show validity of proposed model. The device presented shows good improvement in tranconductance at very small optical power indicating the device as prospective candidate for circuit design at RF.","PeriodicalId":197580,"journal":{"name":"International Conference & Workshop on Emerging Trends in Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference & Workshop on Emerging Trends in Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1980022.1980266","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents Y parameter analysis for optically gated MOSFET at RF frequency. Simulation is done using MATLAB and analysis for Y parameter is done under dark and illuminated condition for varying optical power. It has been seen that device transconductance is highly influenced by optical illumination even for small optical power. Optical effects are mainly due to lowering of surface potential in presence of illumination which is termed as photon induced barrier lowering. The result in dark condition are compared with reported results to show validity of proposed model. The device presented shows good improvement in tranconductance at very small optical power indicating the device as prospective candidate for circuit design at RF.
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