{"title":"Temperature-related MOSFET power loss modeling and optimization for DC-DC converter","authors":"Xiaoyan Yu, P. Yeaman","doi":"10.1109/APEC.2013.6520692","DOIUrl":null,"url":null,"abstract":"This paper presents a temperature-related, accurate and design-oriented MOSFET power loss model for DC-DC converter. This model aims to quantify the power loss based on the information provided by the data sheets and consequently it can facilitate MOSFET selection and optimization. The proposal MOSFET power loss model is practical and accurate since it combines the merits of the physical-based model, behavior model and analytical model from the standpoint of an industrial design, and also includes temperature effect. Parallel related issues such as positive temperature coefficient check and optimal parallel number for maximum efficiency are also analyzed based on this model. A design example has been given for the power loss modeling and parallel related issues.","PeriodicalId":256756,"journal":{"name":"2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.2013.6520692","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper presents a temperature-related, accurate and design-oriented MOSFET power loss model for DC-DC converter. This model aims to quantify the power loss based on the information provided by the data sheets and consequently it can facilitate MOSFET selection and optimization. The proposal MOSFET power loss model is practical and accurate since it combines the merits of the physical-based model, behavior model and analytical model from the standpoint of an industrial design, and also includes temperature effect. Parallel related issues such as positive temperature coefficient check and optimal parallel number for maximum efficiency are also analyzed based on this model. A design example has been given for the power loss modeling and parallel related issues.
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