J. Pastrňák, J. Oswald, I. Gregora, V. Vorlíček, M. Babinský
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引用次数: 5
Abstract
The spatial distribution of luminescence intensity for edge emission and extrinsic Si related bands is studied for Si-doped LEC grown GaAs crystals. Free carrier distribution is determined from the halfwidth and peak position of intrinsic luminescence and from the position of coupled LO-phonon–plasmon modes in Raman spectra. An increase of the luminescence intensity with carrier concentration is observed up to n ≈ 1018 cm−3, the sharp decrease for higher concentrations is ascribed to Auger recombination. The temperature dependence of three Si-related luminescence bands at 1.35 eV (A), 1.2 eV (B), and 1.0 eV (C) is measured. The similarity of the temperature behaviour of the A band with EL2 centres supports its assignment to (Si–AsGa) donors.
[Russian Text Ignored].
研究了掺硅LEC生长的GaAs晶体边缘发射和外源Si相关波段的发光强度的空间分布。自由载流子分布由本征发光的半宽度和峰位置以及lo -声子-等离子体耦合模式在拉曼光谱中的位置确定。在n≈1018 cm−3的载流子浓度下，发光强度随载流子浓度的增加而增加，较高载流子浓度下发光强度急剧下降归因于俄歇复合。测量了1.35 eV (A)、1.2 eV (B)和1.0 eV (C)下硅相关发光带的温度依赖性。A带的温度行为与EL2中心的相似性支持了它对(Si-AsGa)给体的分配。[忽略俄语文本]。
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