The Study of Harmonic-Mode Operation of Transfer Electron Devices on Based Graded-Gap Semiconductors

I. Storozhenko, M. Kaydash, O. Yaroshenko
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Abstract

Mathematical model and simulation results of devices with intervalley electron transfer effect based on graded-gap semiconductors are presented in this article. Drift of space-charge waves and the occurrence of self-oscillations in such devices are analyzed. Moreover, this paper aims to show that the use of graded-gap semiconductors makes it possible to obtain the generation in the sub-terahertz range.
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基于梯度隙半导体转移电子器件的谐波模操作研究
本文给出了基于梯度隙半导体的谷间电子转移效应器件的数学模型和仿真结果。分析了空间电荷波的漂移和自振荡的发生。此外,本文旨在证明使用梯度隙半导体可以在次太赫兹范围内产生。
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