Spin-On Glass as Low-Temperature Gate Insulator for Thin-Film Transistors

Abstract

In this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. The SOG film was deposited at a temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. We demonstrated the use of SOG as gate insulator, fabricating and characterizing a-SiGe: H TFTs.