G. Koblmuller, B. Mayer, T. Stettner, B. Loitsch, M. Kaniber, G. Abstreiter, J. Finley
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Abstract
We present recent advances on monolithically integrated GaAs-nanowire lasers on silicon, and further demonstrate epitaxial gain control to tune threshold power density and lasing wavelength using low-dimensional systems. Ultimately, we also show schemes for ultrafast emission and unique phase coherence properties for future phase-locked lasers.
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