III-Nitride nanowires lasers

George T. Wang, Changyi Li, Sheng Liu, Jeremy B. Wright, B. Leung, D. Koleske, J. Figiel, T. Luk, I. Brener, G. Balakrishnan, S. Brueck
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Abstract

Nanowires have gained interest as coherent, nanoscale light sources. Using a top-down approach, high quality III-nitride-based nanowires with controllable height, pitch and diameter have been realized. Here, the fabrication, and lasing characteristics of GaN-based and GaN/InGaN based nanowires fabricated by this approach will be presented, along with schemes for single optical mode selection, polarization control, beam shaping, and wavelength tuning.
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氮化纳米线激光器
纳米线作为相干纳米级光源已引起人们的兴趣。采用自顶向下的方法,实现了高度、节距和直径可控的高质量iii -氮化物基纳米线。本文将介绍用这种方法制备的GaN基和GaN/InGaN基纳米线的制备和激光特性,以及单光模式选择、偏振控制、光束整形和波长调谐的方案。
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