Temperature Effect on the Surface Flashover Plasma of the GIS Insulator

Shi-jie Lu, Liangen Zhang, Hongtao Zhong, G. Ma, Cheng-Rong Li, Yu Yin, B. Cui, Yu-yi Wu
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Abstract

Flashover plasma across an epoxy sulfur hexafluoride interface in gas insulated switchgear (GIS) may induce blockage of power cut. However, characteristics of flashover plasma across an epoxy sulfur hexafluoride interface under the operation temperature of GIS (80°C) were less discussed previously. In this work, a high voltage experiment setup was built to investigate the temperature effect on the surface flashover plasma. The voltage, current, acoustic and ultra-high frequency signals were obtained with different kind of sensors. The experiments indicate that the flashover voltage reduced 11.74% when temperature increased from 20°C to 80°C. The distributions of electric field, temperature and the gas density were also simulated. A particle-in-cell model including field electron emission and temperature was developed to discuss the temperature effect. From the simulation results, it can be concluded that at higher temperature, it is more likely to develop flashover across an epoxy sulfur hexafluoride interface initiated by field electron emission. This work will give a reference for evaluation and design of epoxy sulfur hexafluoride interface for high-voltage GIS applications.
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温度对GIS绝缘子表面闪络等离子体的影响
在气体绝缘开关设备(GIS)中,闪络等离子体穿过环氧六氟化硫界面可能导致电源堵塞。然而,在GIS工作温度(80℃)下,环氧六氟化硫界面的闪络等离子体特性研究较少。本文建立了一个高压实验装置来研究温度对表面闪络等离子体的影响。用不同类型的传感器采集了电压、电流、声波和超高频信号。实验表明,当温度从20℃升高到80℃时,闪络电压降低了11.74%。模拟了电场、温度和气体密度的分布。建立了包含场电子发射和温度的粒子胞内模型,讨论了温度效应。模拟结果表明,在较高的温度下,由场电子发射引发的环氧六氟化硫界面更容易发生闪络。该工作将为高压GIS应用中环氧六氟化硫接口的评价和设计提供参考。
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